| PART |
Description |
Maker |
| M27W400 M27W400-100B6TR M27W400-100F6TR M27W400-10 |
4 Mbit (512Kb x8 or 256Kb x16), Low Voltage UV EPROM and OTP EPROM
512K X 8 UVPROM, 100 ns, CDIP40
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的x856Kb的x16低压紫外线可擦写可编程只读存储器和OTP存储
256 Kbit 32Kb x 8 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M29W400DB |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
|
STMicroelectronics
|
| M29W400 M29W400B-100ZA1TR M29W400B-120ZA1TR M29W40 |
4 Mbit 512Kb x8 or 256Kb x16 / Boot Block Low Voltage Single Supply Flash Memory
KPT 15C 14#20 1#16 PIN RECP
RES 1 K OHM 1% 0805
KPT 2C 2#20 SKT PLUG
KPTC 3C 3#20 PIN PLUG
CAP .0056UF 250/275VAC ECQ-UL
KPSE 10C 10#20 PIN RECP
KPTC 3C 3#20 SKT PLUG 4兆位512KB的x856Kb的x16插槽，引导块低压单电源闪
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Low Voltage Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，引导块低压单电源闪
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
|
| M29F400BB45N1 M29F400BB45N1T M29F400BB45N3 M29F400 |
4 MBIT (512KB X8 OR 256KB X16, BOOT BLOCK) SINGLE SUPPLY FLASH MEMORY
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Dual Precision Low-Power Single Supply Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Automotive Catalog Excalibur High-Speed Low-Power Precision Operational Amplifiers 8-SOIC -40 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
4 Mbit 512Kb x8 or 256Kb x16, Boot Block Single Supply Flash Memory 4兆位512KB的x8256Kb的x16插槽，启动座单电源闪
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-SOIC 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
High-Speed, Low-Power, Precision Single Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
Excalibur High-Speed Low-Power Precision Operational Amplifier 8-CDIP -55 to 125 4兆位512KB的x856Kb的x16插槽，启动座单电源闪
|
ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
意法半导
STMicroelectronics N.V.
|
| M28R400CT100D16 M28R400CT-KGD M28R400CB100D16 M28R |
Known Good Die 4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 已知良品裸片4兆位56Kb的x16插槽，引导块.8V电源快闪记忆
KNOWN GOOD DIE 4 MBIT (256KB X16) 1.8V SUPPLY FLASH MEMORY
|
STMicroelectronics N.V.
http://
ST Microelectronics
|
| M28F420 |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Flash Memory(4Mb闪速存储器)
|
意法半导
|
| M28R400C-ZBT M28R400CTB120ZB1T M28R400CTB120ZB6T M |
4 Mbit (256Kb x16/ Boot Block) 1.8V Supply Flash Memory
4 Mbit (256Kb x16, Boot Block) 1.8V Supply Flash Memory 4兆位56Kb的x16插槽，引导块.8V电源快闪记忆
|
ST Microelectronics
意法半导
STMicroelectronics N.V.
SGS Thomson Microelectronics
|
| M29W400T |
4Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory(4M位闪速存储器)
|
意法半导
|
| M27W401 M27W401-100B6TR M27W401-100F6TR M27W401-10 |
4 Mbit (512Kb x 8) Low Voltage UV EPROM and OTP EPROM
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SOIC 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x 8 Low Voltage UV EPROM and OTP EPROM 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-PDIP 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
Quadruple 1-of-2 Data Selectors/Multiplexers 16-SO 0 to 70 4兆位512KB的8低压紫外线可擦写可编程只读存储器和OTP存储
4 Mbit 512Kb x8 or 256Kb x16 Low Voltage UV EPROM and OTP EPROM
|
SGS Thomson Microelectronics
STMicroelectronics N.V.
意法半导
STMICROELECTRONICS[STMicroelectronics]
ST Microelectronics
|
| M28W800C-ZBT M28W800CB90N1 M28W800CB90N1T M28W800C |
8 Mbit 512Kb x16, Boot Block 3V Supply Flash Memory
8 MBIT (512KB X16, BOOT BLOCK) 3V SUPPLY FLASH MEMORY
8 Mbit 512Kb x16 / Boot Block 3V Supply Flash Memory
|
ST Microelectronics
|
